plasma chemical vapour deposition

  • 释义

    等离子体化学气相沉积

数据更新时间:2026-04-19 19:36:07
1、

Developments of diamond films by plasma chemical vapour deposition are reviewed in the paper.

本文评述了化学气相沉积法制备人造金刚石薄膜的进展情况.

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2、

Sulfur incorporation in diamond was performed by B-S co-doping method via microwave plasma chemical vapour deposition ( MPCVD) technique on undoped Si as substrates. Dimethyl disulfide and boron oxide were the doping sources, which were diluted in acetone.

利用微波等离子体化学气相沉积(MPCVD)技术,以丙酮为碳源,用二甲基二硫和三氧化二硼作掺杂源,在硅衬底上制备了硼与硫共掺杂的金刚石薄膜。

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3、

The diamond films were deposited in a quartz bell jar type microwave plasma chemical vapour deposition ( MW& PCVD) research device.

利用石英钟罩式微波等离子体化学气相沉积(MW-PCVD)实验装置研究了不同沉积气压对金刚石薄膜沉积结果的影响。

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